学术活动
凝聚态
【凝聚态物理-古天乐代言太阳集团网址论坛2023年第21期(总573期)】Recent progress and prospects on bulk AlN crystal growth by PVT method
浏览次数:
主讲人: 吴亮 教授(奥趋光电)
地点: 古天乐代言太阳集团网址物理楼中212教室
时间: 2023年10月26日(星期四)下午3:00-4:30
主持 联系人: 于彤军 tongjun@pku.edu.cn
主讲人简介: Dr. Liang Wu received his Ph.D., master and bachelor degree from Université catholique de Louvain, Tsinghua University and Dalian University of Technology, respectively. As a National Distinguished Expert, Dr. Liang Wu has more than 20 years of research and development experience on crystal growth equipment & hotzone design, modeling & optimization, defect engineering and material characterization. His team developed world-first 60 mm crack-free bulk AlN single crystalline wafer with leading DUV transparency in 2019, and 3-inch bulk AlN crystals at 2022. Prior to joining Shanghai University as a full professor, he held various R&D and management positions at Intel, FEMAGSoft SA (Belgium), and GCL Energy Holding Limited. He has been granted more than 60 patents and authored one book published in Germany. He contributed more than 100 papers and invited talks in leading conferences.

  Bulk AlN offers excellent properties, wide bandgap (6.2 eV), high thermal conductivity [340 w/(m·°C)], high breakdown field strength (15.4 MV/cm), and chemical stability, consequently shows compelling advantages over SiC/GaN/Ga2O3 in power electronics as well as in deep-UV optoelectronics. In the past decades, considerable effort has been made to grow bulk AlN crystals. Nevertheless, growing large high-quality AlN single crystals is still a very challenging task. In this talk, general strategies to grow AlN crystals by physical vapor transportPVTmethod will be given and their advantages and disadvantages will be addressed in great detail. Finally crack-free and high-quality AlN single crystalline boules up to 76 mm (3 inches) in diameter by the homoepitaxial PVT method using a serials of proprietary techniques will be demonstrated. Material characterization results by HRXRD, Raman spectroscopy and preferential chemical etching after standard lapping/polishing will also be presented. At the end of this talk, primary Far-UVC LED (232 nm) and surface acoustic wave (SAW) devices based on C-plane and A-plane bulk AlN substrates will also be demonstrated, respectively.